Title :
A 128/spl times/128 CMOS active pixel image sensor for highly integrated imaging systems
Author :
Mendis, S.K. ; Kemeny, S.E. ; Fossum, E.R.
Author_Institution :
Center for Space Microelectronics Technol., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 /spl mu/m p-well CMOS process, and consists of a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.<>
Keywords :
CMOS integrated circuits; image sensors; integrated circuit technology; intelligent sensors; 128 pixel; 16384 pixel; 2 micron; 40 micron; CMOS active pixel image sensor; X-Y addressability; integrated imaging systems; p-well CMOS process; sensitivity; smart image sensors; timing requirements; Active noise reduction; CMOS image sensors; CMOS process; CMOS technology; Fabrication; Image sensors; Integrated circuit technology; Pixel; Sensor arrays; Timing;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347235
