Title :
A random noise reduction cell for the photoconversion layer overlaid CCD image sensors
Author :
Ohsawa, S. ; Nakamura, N. ; Matsunaga, Y.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new type of image sensor cell which can reduce random noise, has been proposed and evaluated with a cell test element. The new type of cell structure is characterized by a signal voltage feedback gate (FBG). The FBG is inserted between a storage diode and a CCD register, and it controls the signal read out channel potential. The random noise which occurs at the signal charge storage diode has been reduced from 42 electrons rms to 18 electrons rms, for 5 fF storage diode capacitance.<>
Keywords :
CCD image sensors; random noise; semiconductor device noise; 5 fF; CCD register; photoconversion layer overlaid CCD image sensors; random noise reduction cell; signal charge storage diode; signal read out channel potential; signal voltage feedback gate; test element; Capacitance; Charge coupled devices; Charge-coupled image sensors; Diodes; Electrons; Feedback; Image sensors; Image storage; Noise reduction; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347238
