Groove-fill of tungsten and poly-Si membrane technology for high performance (HDTV) FT-CCD imagers

Author

Peek, H.L. ; Theuwissen, A.J.P. ; Kokshoorn, A.L. ; Daemen, E.J.M.

Author_Institution

Imaging Technol., Philips Res. Lab., Eindhoven, Netherlands

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

567

Lastpage

570

Abstract

Key technologies necessary for the manufacturing of a HDTV Frame Transfer CCD sensor are reported: a groove-fill titanium-tungsten/tungsten shunt wiring technology, directly resulting in a planar surface; non-overlapping poly-Si transfer gate method; very thin poly-Si gate-electrodes (membrane poly-gates technology). With these technologies HDTV FT-CCD an image sensor with a high vertical frame-shift frequency of 25 MHz, a low on-chip power dissipation of 560 mW, and a high sensitivity in general (especially in blue), has been fabricated succesfully.<>

Keywords

CCD image sensors; high definition television; integrated circuit technology; membranes; television camera tubes; tungsten; 2.5 MHz; 560 mW; HDTV Frame Transfer CCD sensor; Si; Ti-W; blue sensitivity; groove-fill titanium-tungsten/tungsten shunt wiring technology; image sensor; manufacture; on-chip power dissipation; planar surface; poly-Si gate-electrodes; poly-Si membrane technology; poly-Si transfer gate; vertical frame-shift frequency; Biomembranes; Dielectrics; Etching; HDTV; Image sensors; Image storage; Metallization; Planarization; Tungsten; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347239

Filename

347239