Title :
Groove-fill of tungsten and poly-Si membrane technology for high performance (HDTV) FT-CCD imagers
Author :
Peek, H.L. ; Theuwissen, A.J.P. ; Kokshoorn, A.L. ; Daemen, E.J.M.
Author_Institution :
Imaging Technol., Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Key technologies necessary for the manufacturing of a HDTV Frame Transfer CCD sensor are reported: a groove-fill titanium-tungsten/tungsten shunt wiring technology, directly resulting in a planar surface; non-overlapping poly-Si transfer gate method; very thin poly-Si gate-electrodes (membrane poly-gates technology). With these technologies HDTV FT-CCD an image sensor with a high vertical frame-shift frequency of 25 MHz, a low on-chip power dissipation of 560 mW, and a high sensitivity in general (especially in blue), has been fabricated succesfully.<>
Keywords :
CCD image sensors; high definition television; integrated circuit technology; membranes; television camera tubes; tungsten; 2.5 MHz; 560 mW; HDTV Frame Transfer CCD sensor; Si; Ti-W; blue sensitivity; groove-fill titanium-tungsten/tungsten shunt wiring technology; image sensor; manufacture; on-chip power dissipation; planar surface; poly-Si gate-electrodes; poly-Si membrane technology; poly-Si transfer gate; vertical frame-shift frequency; Biomembranes; Dielectrics; Etching; HDTV; Image sensors; Image storage; Metallization; Planarization; Tungsten; Wiring;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347239
