Title :
CMOS micromechanical resonator oscillator
Author :
Nguyen, C.T.-C. ; Howe, R.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator to achieve stability and phase noise performance comparable to those of quartz crystal oscillators. It is shown that the closed-loop, steady-state oscillation amplitude of this oscillator can be controlled through the DC-bias voltage applied to the capacitively driven and sensed /spl mu/resonator. Measurements indicate a phase noise density level of -168 dBm/Hz at 5 kHz offset frequency for an oscillator carrier power of -14.5 dBm.<>
Keywords :
CMOS integrated circuits; equivalent circuits; micromechanical devices; noise; oscillators; resonators; stability; CMOS micromechanical resonator oscillator; CMOS technology; DC-bias voltage; Si; monolithic high-Q oscillator; phase noise; polysilicon micromechanical resonator; steady-state oscillation amplitude; surface micromachining technology; CMOS technology; Density measurement; Frequency; Micromachining; Micromechanical devices; Phase noise; Stability; Steady-state; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347242
