Title :
Influence of air pressure on resonating and thermoelectric microstructures realized with standard IC technologies
Author :
Brand, O. ; Lenggenhager, R. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We report the design and fabrication of resonant beam and thermoelectric pressure sensors realized on the same chip with industrial CMOS IC technology followed by anisotropic etching. Combining these two types of pressure sensors, we cover the measurement range between 10/sup -1/ Pa and 10/sup 5/ Pa. In the case of the cantilever beam resonator the influence of the air pressure on the fundamental resonance frequency and quality factor is studied. The results are compared with those obtained for a membrane resonator realized with bipolar IC technology. In case of the thermoelectric sensor, the influence of the air pressure on the temperature elevation of a heated, thermally isolated beam is investigated. We demonstrate IC process compatibility of such pressure sensing systems; this allows inexpensive batch fabrication and cointegration of circuitry.<>
Keywords :
CMOS integrated circuits; Q-factor; electric sensing devices; etching; integrated circuit technology; pressure sensors; thermoelectric devices; 10/sup -1/ to 10/sup 5/ Pa; CMOS IC technology; IC technologies; air pressure; anisotropic etching; batch fabrication; bipolar IC technology; cantilever beam resonator; design; fabrication; membrane resonator; pressure sensors; quality factor; resonating microstructures; thermoelectric microstructures; Anisotropic magnetoresistance; CMOS integrated circuits; CMOS technology; Etching; Fabrication; Resonance; Temperature sensors; Textile industry; Thermal sensors; Thermoelectricity;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347243
