DocumentCode
2312784
Title
Silicon micromachined thermal profilers
Author
Gianchandani, Y.B. ; Najafi, K. ; Orr, B.G.
Author_Institution
Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
191
Lastpage
194
Abstract
This paper presents a class of scanning thermal profilers micromachined from bulk silicon. Each device consists of an Au-polysilicon thermocouple supported by a probe shank overhanging the edge of the device substrate. The probe shank is suspended by flexural beams and can be electrostatically excited into physical motion by lateral comb drives. A polysilicon heater that can be used to provide a thermal bias during the scan lies at its base. Variations of the basic design include suspension of the thermocouple on a dielectric diaphragm, and replacing the thermocouple by a thermopile. A single-sided, IC-compatible 8 mask process has been developed to fabricate these devices. Preliminary data from test scans obtained using a simple set-up indicates that temperature resolution better than 20/spl deg/mC is possible even with basic silicon shank devices.<>
Keywords
elemental semiconductors; machining; micromechanical devices; semiconductor technology; silicon; temperature measurement; thermocouples; thermopiles; Au-Si; Au-polysilicon thermocouple; IC-compatible 8 mask process; dielectric diaphragm; electrostatically excitation; fabrication; flexural beams; lateral comb drives; micromachined silicon; polysilicon heater; probe shank; scanning thermal profilers; temperature resolution; thermal bias; thermopile; Boron; Fabrication; Force measurement; Glass; Microscopy; Signal design; Silicon; Temperature; Thermal resistance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347244
Filename
347244
Link To Document