Title :
High-density active matrix electroluminescent display using single-crystal silicon-on-insulator high-voltage IC technology
Author :
Dolny, G. ; Ipri, A. ; Hsueh, F.-L. ; Stewart, R. ; Khormaei, R. ; Thayer, S. ; Keyser, T. ; Becker, G. ; Spitzer, M. ; Batty, M.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
A novel, high-density, active-matrix, electroluminescent display has been fabricated using single-crystal silicon-on-insulator technology. This new approach offers many advantages including high brightness, superior speed, low power dissipation, high pixel density, high resolution, good gray-scale performance, and improved reliability.<>
Keywords :
circuit reliability; electroluminescent displays; flat panel displays; integrated circuit technology; semiconductor-insulator boundaries; silicon; 200 V; SOI HV IC technology; Si; active matrix electroluminescent display; gray-scale performance; high resolution; high-density; low power dissipation; pixel density; reliability; single-crystal SOI; Active matrix technology; Conducting materials; Displays; Driver circuits; Electroluminescent devices; Integrated circuit interconnections; Logic; Power dissipation; Silicon on insulator technology; Turning;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347247
