Title :
Device characteristics of 0.1 /spl mu/m MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics
Author :
Egawa, Y. ; Inoue, H. ; Yasuda, H. ; Suzuki, Y. ; Iwasa, S. ; Kawasaki, A.
Author_Institution :
Electron. Res. & Dev. Labs., Nippon Steel Corp., Kanagawa, Japan
Abstract :
In this paper, we report for the first time on the mobility and reliability characteristics in 0.1 /spl mu/m gate MOSFET with RONO as gate dielectrics. The nand p-channel LDD FETs used in this study were fabricated on 6-inch (100) p-type silicon wafers.<>
Keywords :
carrier mobility; dielectric materials; hot carriers; insulated gate field effect transistors; oxidation; reliability; 0.1 mum; 0.25 mum; 6 in; MOSFET; RONO; Si; device characteristics; gate dielectrics; mobility; n-channel LDD FETs; p-channel LDD FETs; p-type silicon wafers; reliability; reoxidized nitrided oxide; Degradation; Dielectric devices; Dielectric substrates; Hot carriers; MOSFET circuits; Oxidation; Rough surfaces; Scattering; Surface roughness; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347248
