An 8/spl times/8 array of surface emitting lasers with heterojunction bipolar transistors integrated on them

A large scale two-dimensional array of lasers with electronic circuits is required for realizing optical parallel processing. Vertical integration of a surface emitting laser (SEL) and a transistor is an attractive candidate for such applications. Integration of an SEL on a heterojunction phototransistor (HPT) has already been demonstrated. In this paper, we propose a stacked device in which a heterojunction bipolar transistor (HBT) is set on an SEL with a common-anode configuration. By substituting an HBT for an HPT, higher speed operation is expected. An 8/spl times/8 array of the stacked devices are fabricated.<>