Nanomembrane transfer printing for MR-VCSELs on silicon

Author

Chuwongin, Santhad ; Yang, Hongjun ; Seo, Jung-Hun ; Zhao, Deyin ; Shuai, Yichen ; Yang, Weiquan ; Berggren, Jesper ; Hammar, Mattias ; Ma, Zhenqiang ; Zhou, Weidong

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA

fYear

2012

fDate

23-27 Sept. 2012

Firstpage

951

Lastpage

952

Abstract

The authors report an optically pumped Si membrane reflector vertical cavity surface emitting laser (MR-VCSEL), which was built employing low-temperature PDMS nanomembrane transfer printing processes. The lasing cavity consists of a transferred III-V InGaAsP quantum well (QW) heterostructure active region, sandwiched in between two single layer Si photonic crystal (PC) Fano resonance membrane reflectors (SiMRs). Also included in this paper is the simulated optical E-field distribution profile for the designed lasing cavity mode at 1527 nm.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; membranes; nanophotonics; photonic crystals; printing; quantum well lasers; silicon; surface emitting lasers; InGaAsP-Si; MR-VCSEL; PDMS nanomembrane transfer printing processes; lasing cavity; optical electric field distribution profile; optically pumped silicon membrane reflector; photonic crystal Fano resonance membrane reflectors; quantum well heterostructure; vertical cavity surface emitting laser; wavelength 1527 nm; Cavity resonators; Photonic crystals; Printing; Silicon; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2012 IEEE

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4577-0731-5

Type

conf

DOI

10.1109/IPCon.2012.6359311

Filename

6359311