High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu/sub 3/Ge ohmic contacts

Author

Lin, C.L. ; Aboelfotoh, M.O. ; Woodall, J.M. ; Lin, E.W. ; Ku, W.H. ; Melloch, M.R.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

918

Lastpage

920

Abstract

In this paper, we present results of n- and p-MESFETs using one ohmic contact metallurgy, Cu/sub 3/Ge, which was first introduced by Aboelfotoh. Cu/sub 3/Ge makes an ohmic contact to both n- and p-type GaAs at typical doping levels for device applications. The amphipolar nature of this ohmic contact formation will be discussed elsewhere. These contacts exhibit very low contact resistance and do not suffer from lateral spreading during high temperature annealing (500 C). In addition, their uniformity and reproducibility allow reliable fabrication of high-density sub-micron devices.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric admittance; gallium arsenide; ohmic contacts; semiconductor doping; 500 C; Cu/sub 3/Ge; GaAs; GaAs MESFETs; amphipolar Cu/sub 3/Ge ohmic contacts; device applications; high temperature annealing; high transconductance; high-density sub-micron devices; lateral spreading; low contact resistance; n-channel; ohmic contact metallurgy; p-channel; reliable fabrication; reproducibility; typical doping levels; uniformity; Annealing; Contact resistance; Doping; Fabrication; Gallium arsenide; MESFETs; Ohmic contacts; Reproducibility of results; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347250

Filename

347250