Title :
Submicron CMOS gate electrode discontinuity: electrical signature and effect on circuit speed
Author :
Jenkins, K.A. ; Burghartz, J.N. ; Agnello, P.D. ; Heidel, D.F. ; Wong, C.Y.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The importance of vertical continuity of the gate electrodes of submicron CMOS circuits is discussed. A high frequency technique for assessing this continuity is demonstrated. An example of a gate structure with poor vertical continuity is shown, and the effect on circuit operation is presented.<>
Keywords :
CMOS integrated circuits; electric resistance measurement; insulated gate field effect transistors; integrated circuit testing; CMOS gate electrode discontinuity; HF method; circuit speed effect; electrical signature; high frequency technique; submicron CMOS circuits; vertical continuity; CMOS technology; Conductors; Contact resistance; Electrical resistance measurement; Electrodes; Integrated circuit interconnections; Ring oscillators; Silicides; Tin; Titanium;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347257
