Title :
0.15 /spl mu/m CMOS with high reliability and performance
Author :
Takeuchi, K. ; Yamamoto, T. ; Tanabe, A. ; Matsuki, T. ; Kunio, T. ; Fukuma, M. ; Nakajima, K. ; Aizaki, H. ; Miyamoto, H. ; Ikawa, E.
Author_Institution :
Microelectronics Res. Labs., NEC, Kanagawa, Japan
Abstract :
0.15 /spl mu/m CMOSFETs with high reliability and performance have been realized. The acceptable power supply voltage V/sub cc/ was estimated to be 1.9 V. A reasonably short ring oscillator delay of 33 ps was obtained for the 1.9 V V/sub cc/, maintaining an 0.4 V threshold voltage. Anomalous surface state generation and V/sub TH/ shift for the pMOS were observed, though the degradation was less severe than the nMOS.<>
Keywords :
CMOS integrated circuits; carrier lifetime; circuit reliability; hot carriers; insulated gate field effect transistors; integrated circuit technology; surface electron states; 0.15 micron; 0.4 V; 1.9 V; 33 ps; CMOS IC; CMOSFETs; anomalous surface state generation; high performance; high reliability; nMOS devices; pMOS devices; ring oscillator delay; submicron device fabrication; threshold voltage; CMOSFETs; Degradation; Delay; Electron traps; Hot carriers; MOS devices; Power supplies; Stress; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347259
