• DocumentCode
    2313034
  • Title

    Accelerated Monte Carlo modeling of an RTCVD-reactor

  • Author

    Kersch, A. ; Morokoff, W.

  • Author_Institution
    Corp. Res. & Dev., Siemens AG, Munich, Germany
  • fYear
    1993
  • fDate
    5-8 Dec. 1993
  • Firstpage
    869
  • Lastpage
    872
  • Abstract
    Monte Carlo simulation is an indispensable tool for modeling Rapid Thermal Processes (RTP) with an accuracy of a few degrees. Only this method allows very detailed modeling of the physical processes and geometric complications which arise in real applications involving radiation transport. A well known disadvantage of the standard Monte Carlo method is slow convergence. A significant improvement in computation time, however, can be achieved by using Quasi-Monte Carlo (QMC) methods to simulate radiative heat transfer. We apply this method to the simulation of a RTCVD-reactor. Together with the solution of the conduction and convection problem with the simulator PHOENICS we achieve a detailed understanding of the transport mechanisms inside the reactor. The results demonstrate the necessity to include the effects of reflection law of radiation, spectral dependence and geometrical details to achieve a simulation of very high accuracy. The diffuse approximation is insufficient for that purpose.<>
  • Keywords
    Monte Carlo methods; chemical vapour deposition; heat radiation; heat transfer; rapid thermal processing; semiconductor process modelling; Monte Carlo simulation; PHOENICS simulator; RTCVD-reactor; accelerated Monte Carlo modeling; computation time; geometrical details; quasi-Monte Carlo methods; radiative heat transfer; rapid thermal processes; reflection law of radiation; spectral dependence; transport mechanisms; Acceleration; Atmospheric modeling; Computational modeling; Heat transfer; Inductors; Monte Carlo methods; Optical surface waves; Random sequences; Semiconductor device modeling; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-1450-6
  • Type

    conf

  • DOI
    10.1109/IEDM.1993.347262
  • Filename
    347262