3D modeling of contact material deposition and its impact on equipment design parameters

Author

Baumann, F.H. ; Liu, R. ; Case, C.B. ; Lai, W.Y.-C.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

861

Lastpage

864

Abstract

We report the first full 3D simulations of conventional and collimated sputter deposition into high aspect ratio windows and vias, which accurately reproduce all features of experimental data. First, a 3D Monte Carlo approach is employed to simulate the microscopic structure of the films and the evolution of the topography during deposition. Second, a 3D geometric calculation investigates how macroscopic effects (film thicknesses under the collimator, shadowing, collimator transmission) vary with collimation parameters, such as grid size and position. The results are used to determine optimum equipment design.<>

Keywords

Monte Carlo methods; semiconductor process modelling; simulation; sputter deposition; surface topography; 3D Monte Carlo approach; 3D geometric calculation; 3D modeling; 3D simulations; collimated sputter deposition; collimation parameters; collimator transmission; contact material deposition; equipment design parameters; film thickness; grid position; grid size; high aspect ratio vias; high aspect ratio windows; shadowing; topography; Collimators; Predictive models; Semiconductor device modeling; Shadow mapping; Solid modeling; Sputtering; Surface topography; Thickness measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347264

Filename

347264