Title :
3D modeling of contact material deposition and its impact on equipment design parameters
Author :
Baumann, F.H. ; Liu, R. ; Case, C.B. ; Lai, W.Y.-C.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We report the first full 3D simulations of conventional and collimated sputter deposition into high aspect ratio windows and vias, which accurately reproduce all features of experimental data. First, a 3D Monte Carlo approach is employed to simulate the microscopic structure of the films and the evolution of the topography during deposition. Second, a 3D geometric calculation investigates how macroscopic effects (film thicknesses under the collimator, shadowing, collimator transmission) vary with collimation parameters, such as grid size and position. The results are used to determine optimum equipment design.<>
Keywords :
Monte Carlo methods; semiconductor process modelling; simulation; sputter deposition; surface topography; 3D Monte Carlo approach; 3D geometric calculation; 3D modeling; 3D simulations; collimated sputter deposition; collimation parameters; collimator transmission; contact material deposition; equipment design parameters; film thickness; grid position; grid size; high aspect ratio vias; high aspect ratio windows; shadowing; topography; Collimators; Predictive models; Semiconductor device modeling; Shadow mapping; Solid modeling; Sputtering; Surface topography; Thickness measurement; Tin;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347264
