DocumentCode
2313076
Title
A simulation of micro-loading phenomena in dry-etching process using a new adsorption model
Author
Misaka, A. ; Harafuji, K. ; Nakagawa, H. ; Kubota, M.
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
857
Lastpage
860
Abstract
A new adsorption model in surface reaction of dry-etching process is proposed. The model allows the simulation of micro-loading phenomena in the etching rate, profile and selectivity of SiO/sub 2/ hole etching with hydrofluorocarbon gases. A new 2D-string model with Boolean operation is further developed to simulate the precise profile.<>
Keywords
VLSI; semiconductor process modelling; silicon compounds; simulation; sputter etching; 2D string model; Boolean operation; SiO/sub 2/; SiO/sub 2/ hole etching; adsorption model; dry etching process; etching profile; etching rate; etching selectivity; hydrofluorocarbon gases; microloading phenomena; simulation; surface reaction; Dry etching; Fabrication; Gases; Geometry; Polymers; Predictive models; Solid modeling; Sputter etching; Substrates; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347265
Filename
347265
Link To Document