Title :
A simulation of micro-loading phenomena in dry-etching process using a new adsorption model
Author :
Misaka, A. ; Harafuji, K. ; Nakagawa, H. ; Kubota, M.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A new adsorption model in surface reaction of dry-etching process is proposed. The model allows the simulation of micro-loading phenomena in the etching rate, profile and selectivity of SiO/sub 2/ hole etching with hydrofluorocarbon gases. A new 2D-string model with Boolean operation is further developed to simulate the precise profile.<>
Keywords :
VLSI; semiconductor process modelling; silicon compounds; simulation; sputter etching; 2D string model; Boolean operation; SiO/sub 2/; SiO/sub 2/ hole etching; adsorption model; dry etching process; etching profile; etching rate; etching selectivity; hydrofluorocarbon gases; microloading phenomena; simulation; surface reaction; Dry etching; Fabrication; Gases; Geometry; Polymers; Predictive models; Solid modeling; Sputter etching; Substrates; Surface cleaning;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347265
