Title :
Profile simulation of plasma enhanced and ECR oxide deposition with sputtering
Author :
Chang, C.Y. ; McVittie, J.P. ; Li, J. ; Saraswat, K.C. ; Lassig, S.E. ; Dong, J.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A new profile simulator for plasma enhanced CVD has been developed which considers both the deposition and sputtering processes needed for interlevel dielectric(ILD) gapfill. The profile simulator is based on a generalized model for the plasma deposition as a function of the ion energy flux. Specifically the simulator has five component processes: 1) LPCVD, 2) ion-induced deposition, 3) sputtering with angle-dependent sputter yield, 4) redeposition of the sputtered material and 5) backscatter deposition. Simulated profiles show good agreement with experimental results on the overhang test structure and the trench.<>
Keywords :
electronic engineering computing; plasma CVD; semiconductor process modelling; simulation; sputter deposition; sputter etching; ECR oxide deposition; LPCVD; angle-dependent sputter yield; backscatter deposition; generalized model; interlevel dielectric gapfill; ion energy flux; ion-induced deposition; low pressure CVD; plasma enhanced deposition; profile simulator; redeposition; sputtering processes; Backscatter; Dielectrics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma simulation; Plasma transport processes; Sputter etching; Sputtering; Testing;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347266
