Title :
One-decade reduction of pn-junction leakage current using poly-Si interlayered SOI structures
Author :
Horiuchi, M. ; Ohoyu, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Silicon on insulator (SOI) structures were fabricated by using direct bonding technology to bury multilayered films consisting of poly-Si, Si/sub 3/N/sub 4/, and SiO/sub 2/. The structures were analyzed using SIMS, micro-Raman spectroscopy, and spreading resistance methods. Both the area component and the perimeter component of the pn-junction leakage current was reduced more than 10-fold in the structures that had a poly-Si interlayer just beneath the active devices to act as a gettering site. The leakage current was a function of tensile strength in the SOI layer and was easily controlled by a suitable combination of interlayered insulators.<>
Keywords :
Raman spectra of inorganic solids; getters; leakage currents; p-n homojunctions; secondary ion mass spectra; semiconductor junctions; semiconductor-insulator boundaries; silicon; wafer bonding; SIMS; Si-Si/sub 3/N/sub 4/-SiO/sub 2/; active devices; buried multilayered films; direct bonding technology; gettering; interlayered insulators; leakage current; micro-Raman spectroscopy; pn-junction; poly-Si interlayered SOI structures; spreading resistance; tensile strength; Amorphous materials; Diodes; Fabrication; Gettering; Leakage current; Rough surfaces; Semiconductor films; Silicon on insulator technology; Surface roughness; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347267
