Impact of arsenic deactivation in polycrystalline silicon and at polysilicon-monosilicon interfaces on contact resistance

Author

Perera, A.H. ; Taylor, W.J. ; Orlowski, M.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

835

Lastpage

838

Abstract

Arsenic deactivation in polycrystalline silicon, and in devices incorporating polysilicon in a 4 M SRAM BiCMOS process has been studied. The effects of anneal conditions and material characteristics (grain size and interfacial oxide) on sheet and contact resistance data, and npn bipolar characteristics, shows that arsenic deactivation in polysilicon and at poly/mono-silicon interfaces is a partially reversible process. Our data indicates that appropriate rapid thermal anneals can significantly reduce contact resistance (39%) and improve device performance by reactivating arsenic at the poly/mono-silicon interface.<>

Keywords

BiCMOS integrated circuits; SRAM chips; annealing; arsenic; contact resistance; elemental semiconductors; integrated circuit technology; rapid thermal processing; semiconductor doping; semiconductor junctions; silicon; 4 M SRAM BiCMOS process; 4 Mbit; Si:As-Si; arsenic deactivation; contact resistance; grain size; interfacial oxide; npn bipolar characteristics; polycrystalline silicon; polysilicon-monosilicon interfaces; rapid thermal anneals; sheet resistance; BiCMOS integrated circuits; Contact resistance; Furnaces; MOSFET circuits; Random access memory; Rapid thermal annealing; Sheet materials; Silicon; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347270

Filename

347270