New dual gate doping process using in-situ boron doped-Si for deep sub-/spl mu/m CMOS device

Author

Eguchi, T. ; Azuma, A. ; Mizushima, I. ; Mitani, Y. ; Shiozawa, J. ; Toyoshima, Y. ; Hashimoto, K.

Author_Institution

Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

831

Lastpage

834

Abstract

A new gate doping process for deep sub-/spl mu/m dual gate CMOS is proposed. In-situ boron doped Si film was utilized for p/sup +/ polysilicon gate electrode for pMOSFET. On the other hand, nMOSFET gate was converted to n/sup +/ type using appropriate phosphorus diffusion in POCl/sub 3/ atmosphere. The deep sub-/spl mu/m dual gate CMOS process was demonstrated. There was no boron penetration to the channel or impurity redistribution between n and pMOSFET with sufficient high impurity concentration of both n/sup +/ and p/sup +/ polysilicon gate.<>

Keywords

boron; elemental semiconductors; impurity distribution; insulated gate field effect transistors; semiconductor doping; semiconductor thin films; silicon; POCl/sub 3/ atmosphere; Si:B; Si:B film; deep submicron CMOS device; dual gate doping process; impurity concentration; n/sup +/ MOSFET gate; p/sup +/ polysilicon gate electrode; pMOSFET; Atmosphere; Boron; CMOS process; Electrodes; Impurities; Ion implantation; MOSFET circuits; Semiconductor device doping; Semiconductor films; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347271

Filename

347271