Title :
Center wordline cell: A new symmetric layout cell for 64 Mb SRAM
Author :
Naiki, I. ; Takizawa, M. ; Mano, M. ; Kimura, T. ; Ichikawa, T. ; Tsukamoto, M. ; Fujita, S. ; Nagayama, T. ; Sasaki, M.
Author_Institution :
Semicond. Group, Sony Corp., Kanagawa, Japan
Abstract :
A new symmetric memory cell, in which one wordline is placed at the center, has been developed for 64 Mb SRAM. This new center wordline cell has the benefits of a small cell size, good stability with operation voltages as low as 1.7 V, and suitability for implementation of phase shift lithography. A high performance TFT, which has on/off ratio of 7 orders even at 2.5 V operation, is mounted in this cell.<>
Keywords :
MOS integrated circuits; SRAM chips; cellular arrays; integrated circuit technology; photolithography; thin film transistors; 1.7 to 2.5 V; 64 Mbit; SRAM; cell size; center wordline cell; high performance TFT; on/off ratio; operation voltages; phase shift lithography; stability; symmetric layout cell; Capacitors; Driver circuits; Electrodes; Lithography; Low voltage; Oxidation; Random access memory; Space technology; Stability; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347274
