Title :
Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors
Author :
Reygenson, A. ; Menin, O.A. ; Smith, P.R. ; Hamm, R.A. ; Montgomery, R.K. ; Yadvish, R.D. ; Ritter, D. ; Haner, M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<>
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; heterojunction bipolar transistors; high field effects; hot carriers; indium compounds; semiconductor device models; 500 to 2000 angstrom; InP-GaInAs; InP/GaInAs; Monte Carlo method; ballistic transport effects; base delay times; base width; dielectric function response method; elastic electron scattering; electron transport mechanism; heterostructure bipolar transistors; hot electron diffusion; inelastic electron scattering; quasiballistic transport; self-consistent treatment; transit times; Ballistic transport; Bipolar transistors; Charge carrier processes; Dielectrics; Electrons; Indium phosphide; Light scattering; Particle scattering; Phonons; Plasmons;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347278
