DocumentCode
2313310
Title
Wafer-bonded, high dynamic range, single-crystalline silicon tunneling accelerometer
Author
Chang, David T. ; Kubena, Randall L. ; Stratton, Frederic P. ; Kirby, Deborah J. ; Joyce, Richard J. ; Kim, Jinsoo
Author_Institution
HRL Labs., Malibu, CA, USA
Volume
2
fYear
2002
fDate
2002
Firstpage
860
Abstract
This paper presents a high-dynamic range (106 g) tunneling accelerometer fabricated using precision wafer bonding (< 1 um misalignment) and a wet-release process. This single-crystalline silicon cantilever device with no metal electrical interconnects on the cantilever shows superior long-term bias stability compared with previously reported surface-micromachined tunneling accelerometers. An ASIC control loop can also be integrated with the sensor for low-cost manufacturing.
Keywords
accelerometers; application specific integrated circuits; elemental semiconductors; microsensors; silicon; tunnelling; wafer bonding; ASIC control loop; MEMS sensor; Si; bias stability; dynamic range; manufacturing process; single-crystalline silicon cantilever device; tunneling accelerometer; wafer bonding; wet-release process; Accelerometers; Creep; Crystalline materials; Dynamic range; Fabrication; Manufacturing; Silicon; Substrates; Tunneling; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037220
Filename
1037220
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