Title :
The effect of carrier capture on the modulation bandwidth of quantum well lasers
Author :
Grupen, M. ; Kosinovsky, G. ; Hess, K.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Abstract :
Effects of electron and hole transport on modulation response and ways to compute them are discussed. A brief overview of the self-consistent simulation of quantum well lasers is presented along with a more detailed discussion of carrier capture. The modulation responses of a test laser structure with different carrier capture rates are presented. The results are explained by examining free carrier and electric field distributions calculated for the different cases.<>
Keywords :
carrier mobility; electron traps; hole traps; optical modulation; semiconductor lasers; capture rates; carrier capture; electric field distribution; electron transport; free carrier distribution; hole transport; modulation bandwidth; modulation responses; quantum well lasers; self-consistent simulation; Bandwidth; Carrier confinement; Computational modeling; Laser theory; Poisson equations; Quantum mechanics; Quantum well lasers; Radiative recombination; Semiconductor lasers; Thermionic emission;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347285
