Title :
High characteristic temperature 1.48 /spl mu/m strained-layer MQW laser diode with wide bandgap barrier layers
Author :
Fujihara, K. ; Mori, Y. ; Kito, M. ; Otsuka, N. ; Ishino, M. ; Matsui, Y.
Author_Institution :
Semicond. Res. Center, Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Abstract :
In order to realize high temperature operation of a 1.48 /spl mu/m high power multi-quantum well laser diode, the carrier overflow from the well layers at high temperature should be reduced. This paper shows that utilization of wide bandgap barrier layers in the multi-quantum well structure is effective for this purpose. A highest characteristic temperature of 75 K is achieved.<>
Keywords :
semiconductor lasers; 1.48 micron; 75 K; carrier overflow; characteristic temperature; high power multi-quantum well laser diode; high temperature operation; strained-layer MQW laser diode; wide bandgap barrier layers; Carrier confinement; Charge carrier density; Diode lasers; Optical control; Optical waveguides; Photonic band gap; Power generation; Pulse measurements; Quantum well devices; Temperature;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347286
