DocumentCode
2313345
Title
High characteristic temperature 1.48 /spl mu/m strained-layer MQW laser diode with wide bandgap barrier layers
Author
Fujihara, K. ; Mori, Y. ; Kito, M. ; Otsuka, N. ; Ishino, M. ; Matsui, Y.
Author_Institution
Semicond. Res. Center, Matsushita Electric Ind. Co. Ltd., Osaka, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
605
Lastpage
608
Abstract
In order to realize high temperature operation of a 1.48 /spl mu/m high power multi-quantum well laser diode, the carrier overflow from the well layers at high temperature should be reduced. This paper shows that utilization of wide bandgap barrier layers in the multi-quantum well structure is effective for this purpose. A highest characteristic temperature of 75 K is achieved.<>
Keywords
semiconductor lasers; 1.48 micron; 75 K; carrier overflow; characteristic temperature; high power multi-quantum well laser diode; high temperature operation; strained-layer MQW laser diode; wide bandgap barrier layers; Carrier confinement; Charge carrier density; Diode lasers; Optical control; Optical waveguides; Photonic band gap; Power generation; Pulse measurements; Quantum well devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347286
Filename
347286
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