A 1/4 inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

Author

Mutoh, N. ; Orihara, K. ; Kawakami, Y. ; Nakano, T. ; Kawai, S. ; Murakami, I. ; Tanabe, A. ; Suwazono, S. ; Arai, K. ; Teranishi, N. ; Furumiya, M. ; Morimoto, M. ; Hatano, K. ; Minami, K. ; Hokari, Y.

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

563

Lastpage

566

Abstract

The authors propose a new cell structure employing a gate-assisted punchthrough read-out mode, which is suitable for a high packing density interline-transfer CCD (IT-CCD) image sensor. The new cell structure, fabricated through the use of high energy ion implantation technology, enables both deep photodiode formation and transfer-gate/ channel-stop length reduction. The proposed structure has been applied to a 1/4 inch 380 k pixel IT-CCD image sensor with reduced pixel size as small as 4.8 /spl mu/m (H)/spl times/5.6 /spl mu/m (V), which attains a high sensitivity (35 mV/lx) and a large saturation signal (600 mV).<>

Keywords

CCD image sensors; integrated circuit technology; ion implantation; photodiodes; 0.25 inch; 380 kpixel; 4.8 micron; 5.6 micron; 600 mV; cell structure; deep photodiode formation; fabrication; gate-assisted punchthrough read-out mode; high energy ion implantation technology; interline-transfer CCD image sensor; packing density; pixel size; saturation signal; sensitivity; transfer-gate/channel-stop length reduction; Charge coupled devices; Charge-coupled image sensors; Diodes; HDTV; Image sensors; Ion implantation; MOSFET circuits; National electric code; Photodiodes; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347287

Filename

347287