Title :
Modeling on increase of n-p-n and p-n-p current gain by hydrogen electromigration in polysilicon emitters
Author :
Zhao, J. ; Li, G.P. ; Liao, K.Y. ; Chin, M.R. ; Sun, J.Y.-C. ; Ratnam, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Abstract :
A unified analytical model that relates the increase of current gain to forward current stress is presented for both poly emitter n-p-n and p-n-p transistors. This model is based on electromigration of atomic hydrogen and its subsequent passivation of dangling bonds at polysilicon grain boundaries and poly/mono-silicon interface. The comparison between experiment and simulation results is also presented.<>
Keywords :
bipolar transistors; electromigration; elemental semiconductors; grain boundary diffusion; passivation; semiconductor device models; silicon; Si:H; dangling bonds; electromigration; forward current stress; n-p-n current gain; n-p-n transistors; p-n-p current gain; p-n-p transistors; passivation; poly/mono-silicon interface; polysilicon emitters; polysilicon grain boundaries; unified analytical model; Chemicals; Current density; Electromagnetic interference; Electromigration; Equations; Grain boundaries; Hydrogen; Passivation; Silicon; Stress;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347288
