Title :
Metal (CoSi/sub 2/)/insulator(CaFa/sub 2/) resonant tunneling transistor
Author :
Suemasu, T. ; Kohno, Y. ; Suzuki, N. ; Watanabe, M. ; Asada, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
The first transistor action with negative differential resistance (NDR) of nanometer-thick metal (CoSi/sub 2/)/insulator (CaF/sub 2/) resonant tunneling transistor has been demonstrated. The transistor is composed of metal-insulator (M-I) heterostructures with two metallic (CoSi/sub 2/) quantum wells and three insulator (CaFa/sub 2/) barriers grown on an n-Si(111) substrate. Transfer efficiency /spl alpha/(=I/sub CI/sub E/) dose to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.<>
Keywords :
bipolar transistors; calcium compounds; cobalt compounds; elemental semiconductors; hot electron transistors; metal-insulator-semiconductor devices; negative resistance; resonant tunnelling devices; semiconductor quantum wells; semiconductor technology; silicon; 77 K; CoSi/sub 2/-CaF/sub 2/-Si; CoSi/sub 2/-CaFa/sub 2/-Si; Si; metal-insulator heterostructures; metal-insulator resonant tunneling transistor; negative differential resistance; quantum wells; resonant levels; transfer efficiency; transistor action; Centralized control; Dielectrics and electrical insulation; Electrodes; Electron emission; Metal-insulator structures; Metallic superlattices; Resonance; Resonant tunneling devices; Substrates; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347289
