Two-stage hot-carrier degradation and its impact on submicron LDD NMOSFET lifetime prediction

Author

Vei-Han Chan ; Chung, J.E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

515

Lastpage

518

Abstract

The device degradation of oxide-spacer LDD NMOS transistors due to hot carriers is studied in detail. It is found that the observed saturation in the degradation time dependence is due to a combination of an increase in the series resistance in the lightly-doped drain region, and a reduction of the carrier mobility in the channel and subdiffusion regions. Because the increase in series resistance eventually saturates, an asymptotic degradation rate coefficient can be used to extract a more accurate and consistent value of LDD NMOS lifetime.<>

Keywords

carrier mobility; hot carriers; insulated gate field effect transistors; reliability; NMOSFET lifetime prediction; asymptotic degradation rate coefficient; carrier mobility; degradation time dependence; device degradation; lightly-doped drain region; n-channel MOSFET; oxide-spacer NMOS transistors; series resistance; submicron LDD NMOSFET; two-stage hot-carrier degradation; Charge pumps; Degradation; Electric resistance; Electrical resistance measurement; Hot carriers; Interface states; MOS devices; MOSFET circuits; Stress; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347298

Filename

347298