Title :
A flux-based approach to HBT device modeling
Author :
Tanaka, S. ; Lundstrom, Mark S.
Author_Institution :
School of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey´s (1961) flux method, and formulated by 2/spl times/2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.<>
Keywords :
S-matrix theory; heterojunction bipolar transistors; semiconductor device models; HBT device modeling; carrier transport; flux-based approach; heterojunction bipolar transistors; scattering matrices; short base transport; Analytical models; Boltzmann equation; Circuit synthesis; Heterojunction bipolar transistors; Modems; Physics; Reflection; Scattering; Slabs; Thermionic emission;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347300
