Title :
Compact MOS modeling for analog circuit simulation
Author :
Velghe, R.M.D.A. ; Klaassen, D.B.M. ; Klaassen, F.M.
Author_Institution :
Philips Res. Labs., Eindhoven Univ. of Technol., Netherlands
Abstract :
Analog applications of MOS transistors in integrated circuits impose enhanced requirements on the compact MOS models used in circuit simulators. Here we present for the Philips MOS MODEL 9 the successful confrontation with these analog requirements, the scaling of parameters with geometry, the accuracy of the model over the whole geometry range of a process, its capabilities in the description of various processes at least down to 0.35 /spl mu/m and a comparison with advanced analog models available in commercial circuit simulators.<>
Keywords :
MOS integrated circuits; circuit analysis computing; linear integrated circuits; 0.35 micron; MOS transistors; Philips MOS MODEL 9; analog circuit simulation; circuit simulators; compact MOS models; integrated circuits; Analog circuits; Benchmark testing; Circuit simulation; Circuit testing; Integrated circuit modeling; Laboratories; MOSFETs; Semiconductor process modeling; Solid modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347305
