Title :
Impact of plasma charging damage and diode protection on scaled thin oxide
Author :
Hyungcheol Shin ; Zhi-Jian Ma ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.<>
Keywords :
MOS integrated circuits; electric breakdown of solids; equivalent circuits; insulated gate field effect transistors; protection; semiconductor device models; static electrification; MOSFETs; charging current; charging stress; differential pair circuits; diode protection; oxide thickness dependence; plasma charging damage; quantitative model; scaled thin oxide; wafer charging effect; Circuits; Diodes; MOSFETs; Plasma materials processing; Plasma properties; Plasma simulation; Protection; Semiconductor device modeling; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347309
