Title :
Simulation of RF inductor by the modified ADI-FDTD method
Author :
Hwang, Jiunn-Nan ; Chen, Fu-Chiarng
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this paper, the modified PML conductivity profiles are used to improve the stability of this scheme. The electromagnetic effects of the VLSI circuits in frequency domain is studied. Numerical simulations of the RF inductor will be performed to show the efficiency and accuracy of the proposed scheme.
Keywords :
VLSI; finite difference time-domain analysis; frequency-domain analysis; inductors; RF inductor simulation; VLSI circuits; electromagnetic effects; frequency domain; modified alternating direction implicit-FDTD method; perfectly matched layer; Circuit simulation; Circuit stability; Conductivity; Finite difference methods; Frequency domain analysis; Inductors; Numerical simulation; Radio frequency; Time domain analysis; Very large scale integration;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0877-1
Electronic_ISBN :
978-1-4244-0878-8
DOI :
10.1109/APS.2007.4395998
