Title :
Fabrication of quantum dots using in-situ etching and regrowth during MBE growth
Author :
Der-Cherng Liu ; Chien-Ping Lee ; Shyi-Long Shy
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.<>
Keywords :
etching; masks; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; MBE growth; built-in evaporation mask; fabrication technique; in-situ etching; photoluminescence spectra; quantum confinement effect; regrowth; semiconductor quantum dots; thermal etching; Etching; Fabrication; Gallium arsenide; Holography; Indium gallium arsenide; Lithography; Molecular beam epitaxial growth; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347318
