Title :
Co-integrated resonant tunneling and heterojunction bipolar transistor full adder
Author :
Seabaugh, A.C. ; Taddiken, A.H. ; Beam, E.A., III ; Randall, J.N. ; Kao, Y.-C. ; Newell, B.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We present the first resonant tunneling bipolar transistor integrated circuits operating at room temperature. The circuits are comprised of co-integrated resonant tunneling and double heterojunction bipolar transistors based on III-V heteroepitaxy on InP substrates. The resonant tunneling bipolar transistors exhibit a peak-to-valley collector current ratio exceeding 70 which is higher than previous room temperature reports. Using this technology we demonstrate a 3-transistor XNOR, a 6-transistor XOR, a 5-transistor CARRY, and a 17-transistor full adder, all using a 3 V supply.<>
Keywords :
III-V semiconductors; adders; bipolar integrated circuits; chemical beam epitaxial growth; heterojunction bipolar transistors; hot electron transistors; integrated logic circuits; logic gates; resonant tunnelling devices; semiconductor epitaxial layers; 3 V; CARRY; III-V heteroepitaxy; InP; InP substrates; MOMBE; XNOR; XOR; bipolar transistor integrated circuits; full adder; heterojunction bipolar transistor; peak-to-valley collector current ratio; resonant tunneling bipolar transistor; room temperature; Bipolar integrated circuits; Bipolar transistors; Double heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit technology; RLC circuits; Resonant tunneling devices; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347320
