Co-integrated resonant tunneling and heterojunction bipolar transistor full adder

Author

Seabaugh, A.C. ; Taddiken, A.H. ; Beam, E.A., III ; Randall, J.N. ; Kao, Y.-C. ; Newell, B.

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

419

Lastpage

422

Abstract

We present the first resonant tunneling bipolar transistor integrated circuits operating at room temperature. The circuits are comprised of co-integrated resonant tunneling and double heterojunction bipolar transistors based on III-V heteroepitaxy on InP substrates. The resonant tunneling bipolar transistors exhibit a peak-to-valley collector current ratio exceeding 70 which is higher than previous room temperature reports. Using this technology we demonstrate a 3-transistor XNOR, a 6-transistor XOR, a 5-transistor CARRY, and a 17-transistor full adder, all using a 3 V supply.<>

Keywords

III-V semiconductors; adders; bipolar integrated circuits; chemical beam epitaxial growth; heterojunction bipolar transistors; hot electron transistors; integrated logic circuits; logic gates; resonant tunnelling devices; semiconductor epitaxial layers; 3 V; CARRY; III-V heteroepitaxy; InP; InP substrates; MOMBE; XNOR; XOR; bipolar transistor integrated circuits; full adder; heterojunction bipolar transistor; peak-to-valley collector current ratio; resonant tunneling bipolar transistor; room temperature; Bipolar integrated circuits; Bipolar transistors; Double heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit technology; RLC circuits; Resonant tunneling devices; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347320

Filename

347320