DocumentCode :
2313827
Title :
FOMs extraction for quantum-well lasers and low-noise amplifiers with a modified genetic algorithm technique
Author :
Li, J.K. ; Tseng, H.C.
Author_Institution :
Dept. of Electron. Eng., Kun-Shan Univ., Yung-Kang, Taiwan
fYear :
2010
fDate :
20-22 Oct. 2010
Firstpage :
1
Lastpage :
2
Abstract :
In this work, a modified GA, including search-space separation strategy and local-minima-convergence prevention process, is developed to extract the significant FoMs for the feasible QW lasers and LNAs in future new integrated systems. The multi-parameter extraction strategy is dependent on succinctly associating the analytic equation with the global numerical analysis. Results are demonstrated on state-of-the-art 1060 nm InGaAs QW lasers and advanced 0.35 μm SiGe HBT-based LNAs.
Keywords :
III-V semiconductors; convergence; gallium arsenide; genetic algorithms; indium compounds; low noise amplifiers; quantum well lasers; search problems; FOM extraction; InGaAs; analytic equation; global numerical analysis; integrated systems; local-minima-convergence prevention; low-noise amplifiers; modified genetic algorithm; multiparameter extraction; quantum-well lasers; search-space separation; size 0.35 mum;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4244-9783-6
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2010.5699649
Filename :
5699649
Link To Document :
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