FOMs extraction for quantum-well lasers and low-noise amplifiers with a modified genetic algorithm technique

Author

Li, J.K. ; Tseng, H.C.

Author_Institution

Dept. of Electron. Eng., Kun-Shan Univ., Yung-Kang, Taiwan

fYear

2010

fDate

20-22 Oct. 2010

Firstpage

1

Lastpage

2

Abstract

In this work, a modified GA, including search-space separation strategy and local-minima-convergence prevention process, is developed to extract the significant FoMs for the feasible QW lasers and LNAs in future new integrated systems. The multi-parameter extraction strategy is dependent on succinctly associating the analytic equation with the global numerical analysis. Results are demonstrated on state-of-the-art 1060 nm InGaAs QW lasers and advanced 0.35 μm SiGe HBT-based LNAs.

Keywords

III-V semiconductors; convergence; gallium arsenide; genetic algorithms; indium compounds; low noise amplifiers; quantum well lasers; search problems; FOM extraction; InGaAs; analytic equation; global numerical analysis; integrated systems; local-minima-convergence prevention; low-noise amplifiers; modified genetic algorithm; multiparameter extraction; quantum-well lasers; search-space separation; size 0.35 mum;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International

Conference_Location

Taipei

ISSN

2150-5934

Print_ISBN

978-1-4244-9783-6

Electronic_ISBN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2010.5699649

Filename

5699649