A high aperture and high density a-Si TFT-LCD with a new pixel structure

Author

Toeda, H. ; Tsuji, Y. ; Murooka, M. ; Sugahara, A. ; Ikeda, M. ; Suzuki, N.K.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Tokyo, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

401

Lastpage

404

Abstract

The authors have developed a TFT-LCD with new pixel structure which enhances aperture ratio. The new structure has a transparent electrode between the signal line and the pixel electrode, which shields the capacitive coupling between the signal line and the pixel electrode and reduces the liquid crystal disclination lines caused by the transverse electric field between them. A high aperture ratio of 40% has been achieved on a 40 /spl mu/m square pixel, which is the largest value for this size of a-Si TFT-LCD.<>

Keywords

amorphous semiconductors; elemental semiconductors; liquid crystal displays; optical projectors; semiconductor technology; silicon; thin film transistors; 40 micron; Si; TFT-LCD; a-Si TFT; aperture ratio; capacitive coupling; liquid crystal disclination lines; pixel structure; signal line; transparent electrode; transverse electric field; Apertures; Electrodes; Glass; Insulation; Liquid crystal displays; Pixel; Plasma applications; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347324

Filename

347324