• DocumentCode
    2313872
  • Title

    A high performance mixed micromachined differential resonant accelerometer

  • Author

    Seok, Seonho ; Seong, Sangkyung ; Lee, Byeungleul ; Kim, Jeongheon ; Chun, Kukjin

  • Author_Institution
    SOEE, Seoul Nat. Univ, South Korea
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1058
  • Abstract
    The vacuum packaged differential resonant accelerometer (DRXL) using gap sensitive electrostatic change effect is proposed by using the reverse surface micromachining (RSM) process based on the single crystal silicon. The differential frequency output is achieved by subtracting the resonant frequency between the two independent resonators, which has advantages with the wide input range and the good linearity. But the resonant accelerometer is fabricated using the epi-polysilicon surface micromachining process in the previous work. The residual and shear stress of the polysilicon result in the mismatch of the mechanical resonant frequency. The mismatch of the resonant frequency may demolish the advantages of the differential scheme because of the mechanical resonance characteristics. So, the single-crystal silicon was chosen for the accelerometer structure material because it has better mechanical properties than the polysilicon. The fabricated resonant accelerometer shows the nominal frequency of 6928 Hz and the sensitivity is about 10Hz in the ±10 G range. The bandwidth is more than 100 Hz.
  • Keywords
    accelerometers; elemental semiconductors; internal stresses; micromachining; microsensors; silicon; 100 Hz; 6928 Hz; DRXL; Si; accelerometer structure material; differential frequency output; differential resonant accelerometer; gap sensitive electrostatic change effect; linearity; mechanical resonant frequency; micromachined device; polysilicon; residual stress; resonant frequency; reverse surface micromachining; shear stress; vacuum package; Accelerometers; Electrostatics; Linearity; Mechanical factors; Micromachining; Packaging; Residual stresses; Resonance; Resonant frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2002. Proceedings of IEEE
  • Print_ISBN
    0-7803-7454-1
  • Type

    conf

  • DOI
    10.1109/ICSENS.2002.1037259
  • Filename
    1037259