DocumentCode
2313884
Title
A novel floating gate spacer polysilicon TFT
Author
Tiemin Zhao ; Min Cao ; Plummer, J.D. ; Saraswat, K.C.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
393
Lastpage
396
Abstract
This paper reports on a new polysilicon NMOS TFT device utilizing a polysilicon floating gate spacer (FGS) to reduce the OFF-state leakage current and suppress the kink effect while maintaining a reasonable ON current. The new device has demonstrated a better ON/OFF current ratio than both conventional non-LDD TFT devices and LDD devices with oxide spacers. The device structure is simple and self-aligned. The FGS concept applies to both active matrix liquid crystal displays (AMLCD) and SRAM applications.<>
Keywords
elemental semiconductors; insulated gate field effect transistors; leakage currents; silicon; thin film transistors; NMOS device; Si; floating gate spacer; kink effect suppression; offstate leakage current reduction; polysilicon TFT; self-aligned structure; Active matrix liquid crystal displays; Electrons; Fabrication; Implants; Leakage current; Liquid crystal devices; Medical simulation; Random access memory; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347326
Filename
347326
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