An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits

Author

Tanaka, T. ; Asuma, H. ; Ogawa, K. ; Shinagawa, Y. ; Ono, K. ; Konishi, N.

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

389

Lastpage

392

Abstract

Poly-Si TFTs of an inverted staggered structure are fabricated by peripheral laser annealing of plasma CVD a-Si:H films on SiN gate insulator. The side contact structure improves the TFT characteristics resulting in mobility of 20 cm/sup 2Vs and on/off ratio of 10/sup 6/. The fabrication process, carried out below 300/spl deg/C, is compatible with conventional a-Si TFT processes. The LCD using a switch matrix of poly Si TFTs has good performance and reduces the number of driver ICs by half.<>

Keywords

amorphous semiconductors; elemental semiconductors; field effect integrated circuits; hydrogen; insulated gate field effect transistors; integrated circuit technology; laser beam annealing; liquid crystal displays; plasma CVD; plasma CVD coatings; silicon; thin film transistors; 300 C; LCD; Si:H-SiN; SiN gate insulator; TFT characteristics; amorphous Si:H TFTs; driver IC reduction; fabrication process; inverted staggered structure; laser annealing; mobility; peripheral poly-Si TFT circuits; plasma CVD a-Si:H films; polycrystalline Si; side contact structure; switch matrix; Annealing; Circuits; Electrodes; Glass; Insulation; Optical device fabrication; Plasma temperature; Silicon compounds; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347327

Filename

347327