DocumentCode :
2314028
Title :
A Pt/Ga2O3/SiC Schottky diode based hydrocarbon gas sensor
Author :
Trinchi, A. ; Galatsis, K. ; Wlodarski, W. ; Li, Y.X.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia
Volume :
2
fYear :
2002
fDate :
2002
Firstpage :
1115
Abstract :
This paper presents the propene gas sensing performance of Pt/Ga2O3/SiC based Schottky diodes. The metal oxide semiconducting Ga2O3 thin films were doped with Zn and prepared by the sol-gel process. The thin films were deposited onto the SiC by the spin coating technique and a Pt layer was deposited on the top of the metal oxide forming the Schottky diode. The sensor responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. The diodes were biased at a constant current of 2 mA. When exposed to 1,900 ppm of propene at an operating temperature of 525°C, a shift of 85 mV was observed.
Keywords :
MIS devices; Schottky diodes; gallium compounds; gas sensors; platinum; semimetallic thin films; silicon compounds; sol-gel processing; spin coating; wide band gap semiconductors; 2 mA; 300 to 600 degC; Pt-Ga2O3-SiC; Pt/Ga2O3/SiC; Schottky diode; hydrocarbon gas sensor; metal oxide semiconducting thin films; operating temperatures; propene gas sensing; sensor responses; sol-gel process; spin coating technique; Gas detectors; Hydrocarbons; Hydrogen; Platinum; Schottky diodes; Semiconductivity; Semiconductor thin films; Silicon carbide; Temperature sensors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
Type :
conf
DOI :
10.1109/ICSENS.2002.1037270
Filename :
1037270
Link To Document :
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