Impact ionization phenomenon in 0.1 /spl mu/m MOSFET at low temperature and low voltage

Author

Koyanagi, M. ; Matsumoto, T. ; Tsuno, M. ; Shimatani, T. ; Yoshida, Y. ; Watanabe, H.

Author_Institution

Res. Center for Integrated Syst., Hiroshima Univ., Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

341

Lastpage

344

Abstract

The impact ionization phenomenon in 0.1 /spl mu/m MOSFET´s at low temperature and low drain voltage is investigated by measuring the substrate current and the kink current. It is observed that the substrate current and hence the impact ionization probability decrease as the temperature is decreased. The decrease of the substrate current with decreasing the temperature is more pronounced in such a small sized device which is operated at low drain voltage. The kink effect appears even in the bulk devices at low temperature. The kink effect becomes more serious as the temperature is lowered although the substrate current decreases with decreasing the temperature. The mechanism for such behavior of the substrate current and the kink current at low temperature is discussed from the viewpoints of hot carrier energy, impact ionization threshold energy and the forward-biasing effect of the source junction at low temperature.<>

Keywords

cryogenics; hot carriers; impact ionisation; insulated gate field effect transistors; 0.1 micron; MOSFET; forward-biasing effect; hot carrier energy; impact ionization phenomenon; ionization threshold energy; kink current; low drain voltage; low temperature; probability; source junction; substrate current; Current measurement; Electrons; Hot carrier effects; Impact ionization; Implants; Ion implantation; Low voltage; MOSFET circuits; Scattering; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347338

Filename

347338