Measurement of the hot hole injection probability from Si into SiO/sub 2/ in p-MOSFETs

This paper reports the first experimental results on the injection probability of substrate hot holes in surface channel p-MOS transistors. The results indicate significantly lower probabilities for holes than for electrons, for comparable electric fields in the oxide and in the substrate. From the substrate field dependence of the measured data, and reasonable assumptions for the Si-SiO/sub 2/ energy barrier for holes, we estimate the mean free path to be approximately 40 angstroms at ambient temperature. The injection probability of hot electrons has also been determined on state of the art devices, thus extending previously reported data. The corresponding hot electron mean free path compares well with the published values.<>