A simulation of plastic deformation of silicon during thermal oxidation

Plastic deformation of silicon during thermal oxidation has been simulated using the finite element method. The von Mises yield criterion is assumed for the plastic deformation of silicon. In order to solve a pure elasto-plastic problem, an elasto-visco-plastic algorithm is used with stationary conditions. As an application example, local oxidation of silicon has been simulated, and the result demonstrates that plastic deformation is initiated at the edge of the nitride mask, and expands into substrate silicon as oxidation proceeds.<>