A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

Author

van Dort, M.J. ; Lifka, H. ; Zalm, P.C. ; de Kruif, R.C.M. ; de Boer, W.B. ; Woerlee, P.H. ; Juffermans, C.A.H. ; Walker, A.J. ; Slotboom, J.W. ; Cowern, N.E.B.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

299

Lastpage

302

Abstract

A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is /spl sim/10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET´s. For boron, it is shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.<>

Keywords

boron; diffusion in solids; elemental semiconductors; insulated gate field effect transistors; oxidation; segregation; semiconductor doping; silicon; 10 nm; 2D oxidation-enhanced diffusion; B segregation; MOSFET; Si:B; channel profile; gate reoxidation step; high-resolution study; lateral oxidation; polysilicon gate; Boron; Data mining; Doping profiles; Epitaxial growth; FETs; Gratings; Laboratories; MOSFET circuits; Oxidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347348

Filename

347348