Title :
A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon
Author :
van Dort, M.J. ; Lifka, H. ; Zalm, P.C. ; de Kruif, R.C.M. ; de Boer, W.B. ; Woerlee, P.H. ; Juffermans, C.A.H. ; Walker, A.J. ; Slotboom, J.W. ; Cowern, N.E.B.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is /spl sim/10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET´s. For boron, it is shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.<>
Keywords :
boron; diffusion in solids; elemental semiconductors; insulated gate field effect transistors; oxidation; segregation; semiconductor doping; silicon; 10 nm; 2D oxidation-enhanced diffusion; B segregation; MOSFET; Si:B; channel profile; gate reoxidation step; high-resolution study; lateral oxidation; polysilicon gate; Boron; Data mining; Doping profiles; Epitaxial growth; FETs; Gratings; Laboratories; MOSFET circuits; Oxidation; Silicon;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347348
