Species, dose and energy dependence of implant induced transient enhanced diffusion

Author

Griffin, P.B. ; Lever, R.F. ; Huang, R.Y.S. ; Kennel, H.W. ; Packan, P.A. ; Plummer, J.D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

295

Lastpage

298

Abstract

Special test structures which separate implant damage from a buried monitor boron layer were used to observe the transient diffusion associated with implant annealing. The large anomalous diffusion length is independent of implant species but strongly dependent on implant energy. This is modeled by enhanced Frenkel pair recombination along dense cascade damage tracks associated with heavier ions. The enhancement in the buried layer diffusion also depends on the concentration of the buried layer, even below the intrinsic electron concentration. We propose that boron clusters formed by high populations of mobile boron are necessary in order to model transient diffusion effects.<>

Keywords

annealing; arsenic; boron; diffusion in solids; integrated circuit technology; ion implantation; phosphorus; semiconductor process modelling; silicon; B clusters; Frenkel pair recombination; Si:As; Si:B; Si:P; anomalous diffusion length; buried layer diffusion; buried monitor boron layer; electron concentration; implant annealing; implant damage; implant dose dependence; implant energy dependence; implant induced transient enhanced diffusion; implant species dependence; model; test structures; Boron; Computational modeling; Electrons; Implants; Monitoring; Rapid thermal processing; Simulated annealing; Spontaneous emission; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347349

Filename

347349