Title :
Patterned quantum dot and nanopore lasers
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
The formation of patterned quantum dot lasers and laser results for this type of quantum dot laser are outlined. A novel inverted quantum dot structure or nanopore laser containing three dimensional quantization formed from an engineered periodicity is described.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; quantum dot lasers; InGaAs; nanopore lasers; patterned quantum dot laser; quantum dot structure; three dimensional quantization; Gallium arsenide; Photonics; Threshold current;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699680
