DocumentCode
2314358
Title
A highly reliable via filling technology using high-temperature Al-Sc alloy sputter deposition
Author
Nishimura, H. ; Ogawa, S. ; Yamada, T.
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
281
Lastpage
284
Abstract
A via filling technology using high-temperature Al-Si-Sc alloy sputter deposition has been studied and compared with Al-Si-Cu and W filled vias. It was found that the electromigration resistance of the Al-Si-Sc filled vias is a factor of 25-40 times greater than those of the Al-Si-Cu and W filled vias. The electromigration resistance of the W and Al-Si-Cu filled vias is almost the same.<>
Keywords
VLSI; aluminium alloys; circuit reliability; electromigration; integrated circuit technology; metallisation; scandium alloys; silicon alloys; sputter deposition; sputtered coatings; Al-Si-Sc alloy; AlSiSc; electromigration resistance; high-temperature sputter deposition; highly reliable technology; via filling technology; Argon; Dielectric substrates; Electric resistance; Electromigration; Fabrication; Filling; Metallization; Sputter etching; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347351
Filename
347351
Link To Document