DocumentCode :
2314367
Title :
Interconnection formation by simultaneous copper doping in chemical-vapor-deposited aluminum (Al-Cu CVD)
Author :
Kondoh, E. ; Kawano, Yoshihiro ; Takeyasu, N. ; Katagiri, Takahiro ; Yamamoto, H. ; Ohta, T.
Author_Institution :
LSI Res. Center, Kawasaki Steel Corp., Chiba, Japan
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
277
Lastpage :
280
Abstract :
A novel chemical vapor deposition (CVD) method to form Al-Cu wirings and via filling by simultaneous doping of Cu (Al-Cu CVD) has been developed and demonstrated for advanced ULSI applications. The success of Al-Cu CVD was accomplished by finding appropriate Al and Cu metalorganic precursors: dimethylaluminum-hydride and cyclopentadienylcopper-triethylphosphine. The deposited Al-Cu film had an excellent uniformity of Cu distribution and contained CuAl/sub 2/ phase that is indicative of hypo-eutectic Al-Cu alloy applicable to a practical interconnection use. It was shown that the electric resistance and electromigration endurance of CVD Al was improved by Cu incorporation using this simultaneous Cu doping method.<>
Keywords :
CVD coatings; VLSI; aluminium alloys; chemical vapour deposition; copper alloys; electromigration; integrated circuit technology; metallisation; Al-Cu CVD; Al-Cu via filling; Al-Cu wirings; AlCu; IC metallisation; ULSI applications; chemical-vapor-deposited Al; cyclopentadienylcopper-triethylphosphine; dimethylaluminum-hydride; electric resistance; electromigration endurance; hypo-eutectic Al-Cu alloy; interconnection formation; metalorganic precursors; simultaneous Cu doping method; Aluminum alloys; Annealing; Chemical vapor deposition; Copper alloys; Doping; Electromigration; Filling; Hydrogen; Inductors; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347352
Filename :
347352
Link To Document :
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