DocumentCode :
2314418
Title :
Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique
Author :
Yamada, H. ; Hoshi, T. ; Takewaki, T. ; Shibata, T. ; Ohmi, T. ; Nitta, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
269
Lastpage :
272
Abstract :
By using a simple pulsed-current stressing technique, we have demonstrated that both electromigration and stressmigration resistance of giant-grain Cu interconnects can be evaluated separately in a very efficient manner. From the results of such lifetests, it was found that the reliability of the the Cu interconnect is primarily determined by the stressmigration rather than by the electromigration.<>
Keywords :
circuit reliability; copper; electromigration; impulse testing; integrated circuit testing; life testing; metallisation; monolithic integrated circuits; Cu; ULSI; copper interconnects; electromigration; giant-grain Cu interconnects; lifetests; pulsed-current stressing technique; reliability; stressmigration; Copper; Degradation; Electromigration; Heating; Space vector pulse width modulation; Temperature; Testing; Thermal resistance; Thermal stresses; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347354
Filename :
347354
Link To Document :
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